The slurry is the most critical and expensive part of the CMP process and determines the selection of all other chemicals and equipment.

High-performance silicon carbide slurries for scalable manufacturing of low-defectivity power and semi-insulating SiC substrates. Optimised for Si-face, C-face, and poly-SiC wafers.
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Innovative solutions for bulk polishing, lapping, and CMP of multiple nitride surfaces — GaN, AlGaN, AlN, Ga- or N-face, 'c' or 'm' planes.
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Developed for prime polished wafers — highly refined, ultrapure crystalline silicon with ultra-flat, ultraclean surfaces customised to specifications.
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CeO₂ based polishing slurries for precision quartz glass finishing. Multiple particle size ranges for roughing and fine polishing stages.
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Semi-spherical α-Al₂O— with controllable particle size (D90 < 300nm). High-purity 3N, fully customisable for your CMP process.
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Semi-spherical CeO₂ from 30–7000nm. Up to 4N purity. Industry-leading removal rate and stability performance.
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