Product Catalog

CMP Slurries & Abrasive Powders

A comprehensive portfolio addressing complex challenges across logic, memory, foundry, wafer substrate, and rigid disk substrate markets.

CMP Slurries

The slurry is the most critical and expensive part of the CMP process and determines the selection of all other chemicals and equipment.

SiC Wafer CMP Slurries

High-performance silicon carbide slurries for scalable manufacturing of low-defectivity power and semi-insulating SiC substrates. Optimised for Si-face, C-face, and poly-SiC wafers.

Ra < 0.2 nmNo Sub-surface DamageHVM Ready
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GaN / Nitride CMP Slurries

Innovative solutions for bulk polishing, lapping, and CMP of multiple nitride surfaces �GaN, AlGaN, AlN, Ga- or N-face, 'c' or 'm' planes.

Ultra-high MRRRa < 0.2 nmZero SSD
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Si Wafer CMP Slurries

Developed for prime polished wafers �highly refined, ultrapure crystalline silicon with ultra-flat, ultraclean surfaces customised to specifications.

Colloidal SiOâ‚?/span>Ultra-pureCustomisable
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Quartz Glass Polishing Slurry

CeOâ‚?based polishing slurries for precision quartz glass finishing. Multiple particle size ranges for roughing and fine polishing stages.

CeOâ‚?Based800-1000nm100-200nm
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Micro-nano Alumina Powder

Semi-spherical α-Al₂O�with controllable particle size (D90 < 300nm). High-purity 3N, fully customisable for your CMP process.

100�000 nm3N PurityCustomisable
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Micro-nano Ceria Powder

Semi-spherical CeO�from 30�000nm. Up to 4N purity. Industry-leading removal rate and stability performance.

30�000 nm3-4N PuritySuperior MRR
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Technical Specifications

SiC Wafer CMP Slurry Specifications

Complete product line for rough and fine polishing stages of silicon carbide wafer processing.

ModelAbrasiveSolid ContentParticle SizepHPadRemoval Rate
NSAOS2412-Aα-Al₂O�/td>6�%100�00 nm9�0SUBA8001.5� μm/h
NSAOS2412-B�/td>5%�/td>6�SUBA800�/td>
NSSOS2411-AColloidal SiO�/td>38�2%100�20 nm9�0POLITEX0.2�.3 μm/h
NSSOS2411-B�/td>�/td>�/td>10.5�2POLITEX�/td>

Micro-nano Powder Specifications

Full range of alumina and ceria powders with controllable particle sizes.

ModelProductParticle Size (nm)Surface Area (m²/g)Density (g/cm³)Purity
NSAOP24110Alumina Powder800�0003�1.6�.83N
NSAOP2415Alumina Powder400�005�01.6�.83N
NSAOP2412Alumina Powder100�005�01.6�.83N
NSCOP24110Ceria Powder1000�0008�51.5�.73-4N
NSCOP2413Ceria Powder300�0010�01.6�.73-4N
NSCOP24108Ceria Powder80�0020�01.6�.73-4N
NSCOP24105Ceria Powder50�020�01.6�.83-4N
NSCOP24103Ceria Powder30�030�01.6�.83-4N

Si Wafer CMP Slurry Specifications

ModelAbrasiveSolid ContentParticle SizepHDilution
NSSOS24108Colloidal SiO�/td>10�5%60�00 nm11�21:15
NSSOS24103Colloidal SiO�/td>20�5%15�5 nm11�21:20

Need a custom formulation?

Our application engineering team delivers tailored CMP solutions for your specific process requirements.

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